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hexfet ? power mosfet hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design , that inter- national rectifier is well known for, provides the de- signer with an extremely efficient and reliable device for use in battery and load management. the tssop-8 package, has 45% less footprint area than the standard so-8. this makes the tssop-8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the tssop-8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. IRF7700GPBF description ultra low on-resistance p-channel mosfet very small soic package low profile (< 1.1mm) available in tape & reel lead-free halogen-free tssop-8 parameter max. units v ds drain- source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -8.6 i d @ t a = 70c continuous drain current, v gs @ -4.5v -6.8 a i dm pulsed drain current -68 p d @t a = 25c power dissipation 1.5 p d @t a = 70c power dissipation 0.96 linear derating factor 0.01 w/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c parameter max. units r ja maximum junction-to-ambient 83 c/w thermal resistance absolute maximum ratings www.irf.com 1 05/15/09 v dss r ds(on) max i d -20v 0.015@v gs = -4.5v -8.6a 0.024@v gs = -2.5v -7.3a

2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. pulse width 300s; duty cycle parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -1.5a, v gs = 0v t rr reverse recovery time ??? 130 200 ns t j = 25c, i f = -1.5a q rr reverse recoverycharge ??? 180 270 nc di/dt = 100a/s source-drain ratings and characteristics -68 -1.5 when mounted on 1 inch square copper board, t<10 sec parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.011 ??? v/c reference to 25c, i d = -1ma ??? ??? 0.015 v gs = -4.5v, i d = -8.6a ??? 0.024 v gs = -2.5v, i d = -7.3a v gs(th) gate threshold voltage -0.45 ??? -1.2 v v ds = v gs , i d = -250a g fs forward transconductance -20 ??? ??? s v ds = -10v, i d = -8.6a ??? ??? -1.0 v ds = -16v, v gs = 0v ??? ??? -25 v ds = -16v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -12v gate-to-source reverse leakage ??? ??? 100 v gs = 12v q g total gate charge ??? 59 89 i d = -8.6a q gs gate-to-source charge ??? 10 15 nc v ds = -16v q gd gate-to-drain ("miller") charge ??? 19 29 v gs = -5.0v t d(on) turn-on delay time ??? 19 ??? v dd = -10v t r rise time ??? 40 ??? i d = -1.0a t d(off) turn-off delay time ??? 120 ??? r g = 6.0 ? t f fall time ??? 130 ??? v gs = -4.5v c iss input capacitance ??? 4300 ??? v gs = 0v c oss output capacitance ??? 880 ??? pf v ds = -15v c rss reverse transfer capacitance ??? 580 ??? ? = tbdkhz electrical characteristics @ t j = 25c (unless otherwise specified) a ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns s d g
www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -8.6a fig 4. normalized on-resistance vs. temperature 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -10v -4.5v -3.0v -2.7v -2.5v -2.25v -2.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.0v 2.0 2.4 2.8 3.2 v gs , gate-to-source voltage (v) 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = -15v 20s pulse width 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -10v -4.5v -3.0v -2.7v -2.5v -2.25v -2.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.0v
4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 1 10 100 0 1000 2000 3000 4000 5000 6000 7000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 20 40 60 80 100 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -8.6a v = -16v ds 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
www.irf.com 5 fig 10. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
1 0.1 %

+ - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
6 www.irf.com fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 2.0 4.0 6.0 8.0 10.0 -v gs, gate -to -source voltage (v) 0.010 0.014 0.018 0.022 0.026 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -8.6a 0 20406080 -i d , drain current (a) 0.00 0.02 0.04 0.06 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -4.5v v gs = -2.5v
www.irf.com 7 fig 14. threshold voltage vs. temperature typical power vs. time 0.01 0.10 1.00 10.00 100.00 time (sec) 0 10 20 30 40 50 60 p o w e r ( w ) -50 0 50 100 150 t j , temperature (c) 0.30 0.40 0.50 0.60 0.70 0.80 0.90 - v g s ( t h ) , v a r i a c e ( v ) i d = -250a
8 www.irf.com note: for the most current drawing please refer to ir website at http://www.irf.com/package/

!!! " " " " tssop8 package outline dimensions are shown in milimeters (inches)

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www.irf.com 9 data and specifications subject to change without notice. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/2009

tssop-8 tape and reel information

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